Data storage device with rewriteable in-place memory

ABSTRACT

A non-volatile memory may be resident in a data storage device. The non-volatile memory can consist of a rewritable in-place memory cell having a read-write asymmetry. The non-volatile memory may be divided into a first group of tiers with a selection module of the data storage device prior to adapting to an event by altering the non-volatile memory into a second group of tiers. The first and second groups of tiers being different.

SUMMARY

A data storage device, in accordance with various embodiments, has anon-volatile memory that consist of a rewritable in-place memory cellhaving a read-write asymmetry. The non-volatile memory is divided into afirst group of tiers with a selection module of the data storage deviceprior to adapting to an event by altering the non-volatile memory into asecond group of tiers. The first and second groups of tiers beingdifferent.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 displays a block representation of an example data storage systemin which various embodiments may be practiced.

FIGS. 2A and 2B respectively represent portions of an example datastorage device that may be employed in the data storage system of FIG.1.

FIGS. 3A-3C respectively depict portions of an example memory cell thatmay be utilized in the data storage system of FIG. 1.

FIG. 4 plots example operational data associated with the data storagesystem of FIG. 1.

FIGS. 5A and 5B respectively show portions of an example data storagedevice operated in accordance with various embodiments.

FIG. 6 illustrates a block representation of portions of an example datastorage device arranged in accordance with some embodiments.

FIG. 7 is a block representation of portions of an example data storagedevice configured in accordance with assorted embodiments.

FIG. 8 displays a block representation of a portion of an example datastorage device that may be employed in the data storage system of FIG.1.

FIG. 9 depicts a block representation of a portion of an example datastorage device arranged in accordance with some embodiments.

FIGS. 10A-10D respectively represent of a portion of an examplelithographic assembly formed in accordance with assorted embodiments.

FIG. 11 is a flowchart of an example in-place memory utilization routineexecuted with the data storage system of FIG. 1 in accordance with someembodiments.

DETAILED DESCRIPTION

With increasing amounts of data being generated, transferred, andstored, the speed, cost, size, and longevity of data storage has becomestressed. While a hard disk drive (HDD) employing rotating magneticmedia can reliably store data for long periods of time, the relativelylarge physical size and slow data access speeds have hampered theadoption of HDD in many computing devices. Solid-state drives thatemploy NAND flash memory can provide faster data access speeds andsmaller physical sizes, but with a greater cost and low longevity thanHDD.

The relatively short longevity of flash memory has been exacerbated bydata management structures and schemes that write, move, and delete datarepeatedly in an effort to decrease data access latency. The fact thatflash memory is not bit or byte addressable and instead is merelypage/sector addressable compounds the short longevity of the memory andresults in complex data management and relatively long data access timescompared to volatile memories that are bit/byte addressable. However,the requirement of volatile memories to continuously have power toretain data restricts the potential applicability of these types ofmemory in a data storage device.

Accordingly, various embodiments are generally directed to data storagestructures and operations that utilize rewritable in-place memory thatenjoys faster data access speeds than flash memory, smaller physicalsize than HDDs, and non-volatile data retention. The ability to storedata in non-volatile memory with relatively fast data access speedsallows for a diverse variety of data management structures and schemesthat can optimize data retention, reading, and writing. Meanwhile, therelatively small physical size of rewritable in-place memory allows adata storage device to be small enough to be implemented in moderncomputing devices, such as smartphones and tablet computers, while beingrobust enough to be employed in large data capacity centers.

FIG. 1 displays an example data storage system 100 in which assortedembodiments of the present disclosure may be practiced. The system 100can connect any number of data storage device 102 to any number of host104 via a wired and/or wireless network. One or more network controller106 can be hardware or software based and provide data requestprocessing and distribution to the various connected data storagedevices 102. It is noted that the multiple data storage devices 102 maybe similar, or dissimilar, types of memory with different datacapacities, operating parameters, and data access speeds.

In some embodiments, at least one data storage device 102 of the system100 has a local processor 108, such as a microprocessor or programmablecontroller, connected to an on-chip buffer 110, such as static randomaccess memory (SRAM), and an off-chip buffer 112, such as dynamic randomaccess memory (DRAM), and a non-volatile memory array 114. Thenon-limiting embodiment of FIG. 1 arranges the non-volatile memory array114 comprises NAND flash memory that is partially shown schematicallywith first (BL1) and second (BL2) bit lines operating with first (WL1)and second (WL2) word lines and first (SL1) and second (SL2) sourcelines to write and read data stored in first 116, second 118, third 120,and fourth 122 flash cells.

It is noted that the respective bit lines correspond with first 124 andsecond 126 pages of memory that are the minimum resolution of the memoryarray 114. That is, the construction of the flash memory prevents theflash cells from being individually rewritable in-place and instead arerewritable on a page-by-page basis. Such low data resolution, along withthe fact that flash memory wears out after a number of write/rewritecycles, corresponds with numerous performance bottlenecks andoperational inefficiencies compared to memory with cells that are bitaddressable while being individually accessible and individuallyrewritable in-place. Hence, various embodiments are directed toimplementing bit addressable, rewritable in-place memory into a datastorage device 102 that may be part of a distributed network datastorage system 100.

FIGS. 2A and 2B represent portions of an example memory array 140 thatmay be utilized in a data storage device in accordance with variousembodiments. The memory array 140 has a plurality of separate memorycells 142 vertically stacked along the Z axis as part of a threedimensional array. While it is contemplated that a single die of memorycells 142 can be utilized, such configuration has diminished datacapacity and fails to utilize the all the available space. Hence,various embodiments vertically stack multiple die of memory cells 142that each reside in the X-Y plane. In yet, the vertically stacked cells142 are not, necessarily, required to be vertically aligned in themanner shown in FIG. 2A.

With NAND flash memory and other solid-state data storage cells, atransistor or other separate selection component is incorporated intoeach cell, which occupies valuable real estate, consumes extra power,and adds latency to data access operations. Each memory cell 142 of thememory array 140 is constructed without a transistor or other physicallyseparate selection component and instead has a selection layer 144contacting a resistive unit 146. The selection layer 144 can be a singlematerial or a lamination of different materials that prevent electricalflow to the resistive unit 146 at predetermined times and allowselectrical flow to the resistive unit 146 at other predetermined times.As a non-limiting example, the selection layer 144 can be ametal-insulator transition (MIT) material, an ovonic threshold switch(OTS), or other voltage regulating structure.

The inclusion of a transistor or other selection component, as shown inFIG. 1, corresponds with a source line that activates the respectiveselection component. The elimination of any selection components infavor of the selection layer 144 allows the vertically stacked memorycells 142 to be individually accessible by a cross-point interconnectconfiguration where bit lines (BL) operate with word lines (WL) toaccess one or more cells 142. As illustrated by line 148 an inducedelectrical potential difference between the bit line and word lineinduces electrical flow through a single memory cell 142. The ability toselect a single bit, hence bit addressable, allows the memory array 140to densely package the cells without concern for inadvertent accessingof memory cells 142.

It is noted that the construction of the memory cells 142 provides forrelatively low power consumption, which corresponds with low risk ofdisturb of non-selected and physically adjacent cells 142 during readand/or write operations. The top view of FIG. 2B conveys how the memorycells 142 can be positioned with respect to assorted bit and word linesalone a single die. By utilizing bit lines between vertically stackedmemory cells 142, the overall number of control interconnects can bereduced, which provides a more densely packaged memory array 140.

FIGS. 3A-3C respectively convey line representations of examplenon-volatile resistive units capable of being utilized in the memoryarray 140. FIG. 3A represents a phase change type resistive unit 160 theoccupies a resistive region 162 with a chalcogenide glass material 164that reacts to current to transition between an amorphous 166, lowresistivity state and a crystalline, high resistivity state. Theswitching between polycrystalline and amorphous states can reliably becycled efficiently. However, the writing/switching current can berelatively high for the phase change resistive unit 160.

FIG. 3B represents a filament type resistive unit 170 where theresistive region 162 comprises a material that has a high resistivityuntil one or more electrically conductive filaments 172 are induced bythe flow of a writing current through the region 162. The formation offilaments can be simple and efficient, but it is contemplated thatfilament(s) may become engrained in the dielectric material 174 andreduce the margin between high and low resistivity states.

The formation of conductive pathways in the phase change 160 andfilament 170 type units may be efficient in some data storagearrangements, but not necessarily all memory arrays. Accordingly, aresistive unit may create different resistive states via relativemagnetic orientations. The magnetic type resistive unit 180 of FIG. 3Cshows how a dielectric spacer layer 182 is disposed between a magneticfree layer 184 and a magnetic reference layer 186. The reference layer186 is set to a fixed magnetization 188 while the free layer 184 can beset to multiple different magnetic orientations 190 that, relative tothe fixed magnetization 188, provide different resistive states for theunit 180. It is contemplated that the resistive unit 180 may haveadditional spin polarizing layers, such as in a spin torque arrangement,that function to make the switching of the free magnetization 188 moreefficient.

The ability to utilize different types of resistive units in a memoryarray allows a data storage device to customize the operation and datastoring capabilities of a data storage device. As a non-limitingexample, a memory array may employ different types of resistive units indifferent die, which can provide a selectable diversity of operatingconditions and data storage parameters. Regardless of the type ordiversity of resistive unit in a memory array, a memory cell may sufferfrom asymmetric access where a write operation takes a different amountof time to complete than a read operation. That is, the replacement of aseparate selecting component, such as a transistor or diode, for theselection layer 144 can result in asymmetric access. Such asymmetricaccess can be problematic in data storage devices where high volumes ofdata writes and reads can be conducted without concern or evaluation ofif a previous read or write operation has completed.

For memory arrays employing phase change type resistive units 160, it isnoted that a write access can take considerably more time to completethan a read, such as 7 microsecond latency for a read and 10+microsecond latency for a write. It is contemplated that the read/writeasymmetry can be even larger, such as double or even an order ofmagnitude longer for a write operation to complete compared to a readoperation. These issues have created interesting data managementsituations that are not addressed in volatile memory, HDD storage, orNAND flash storage.

FIG. 4 plots example operational data of voltage over time associatedwith a memory array employing asymmetric memory cells in accordance withvarious embodiments. The construction of the memory cells of a memoryarray correspond to a different read (V_(READ)) and write (V_(WRITE))threshold voltages to respectively access or modify the resistive state,and associated binary state, of a memory cell.

In the event a first voltage 202 is received by one or more memory cellsthat is below both the read and write threshold voltages, the selectionlayer of each memory cell will prevent the voltage from passing throughcell, which prevents inadvertent resistance variations from degrading adata access operations. When a voltage 204/206 is greater than the readthreshold voltage, the selection layer of a memory cell allows thevoltage to pass through the cell. For voltage 204 that is not greatenough to change the resistive state of the resistive unit, the existingresistive state will be read via signals through the orthogonallyoriented bit and word lines.

The passage of a write voltage 206 through the memory cell will changethe resistive state of the resistive unit. However, there is a settletime 208 after the write voltage passes through the resistive unit forthe memory cell to be set to a resistive state that can be accessed witha read voltage 210. The settle time 208 is directly responsible for theread/write asymmetry of a memory cell, as illustrated in FIG. 4. Thus,the relatively high data capacity and fast read latency associated withthe memory array 140 can be degraded by the write asymmetry thatrequires the data storage device to monitor and account for therelatively long settle time for each memory cell every instance wherethe cell is written.

Accordingly, assorted embodiments are directed to structure and methodsof optimizing the use of the non-volatile, bit addressable, rewritablein-place memory of FIG. 2 that suffers from asymmetric read/writeoperations. FIGS. 5A and 5B respectively convey block representations ofexample write and read operations to a data storage device 220 with thememory array of FIG. 2. A write operation is shown in FIG. 5A and beginswith a data of a write request flowing to an SRAM buffer 110 on a waferchip 222 and/or a DRAM buffer 112 positioned off-chip 222. The writedata is then sequentially compressed 224 and encrypted 226 as directedby a local controller executing firmware, software, or hardwareoperations.

The compressed and encrypted write data is compiled in a write cache 228as memory units (MU) 230 that can consist of multiple pages and/orsectors of data. It is noted that the compilation of MUs 230 is notrequired for rewritable in-place non-volatile memories due to individualbits being accessible, as opposed to page accessible flash memory.Regardless of whether the write data is organized into map units 230,the write cache 228 can temporarily store the write data until the datais written to the non-volatile memory (NV MEMORY) 232 where at least aportion of the memory 232 has the asymmetric memory cells 142 of FIG. 2.

With the data written to the asymmetric cells of the non-volatile memory232, a read operation cannot reliably access the data from thenon-volatile memory 232 until after the settle time 208. Therefore, aread operation, in some embodiments, involves a selection module 234 ofa data storage device to retrieve data either from the write cache 228or the non-volatile memory 232, as shown in FIG. 5B. It is noted thatthe write cache 228 is a different type of memory, such as DRAM or NANDflash, than the non-volatile memory 232 and a read operation willinvolve decryption and decompression before being sent to a host. Hence,the selection module 234 intelligently manages multiple different typesof memory to take advantage of the fast read speed of the non-volatilememory cells 142 of FIG. 2 without suffering from extended write latencydue to the settle time of the cells 142.

Although not limiting or required, the selection module 234 can conducta variety of intelligent evaluations to optimize satisfaction of dataaccesses from one or more hosts. FIG. 6 is a block representation of aportion of an example data storage device 240 employing the memory array140 of FIG. 2. The selection module 234 has access to at least a timer242, activity log 244, sensor 246, and prediction circuit 248 toevaluate the optimal destination and condition for a write or readrequest to be serviced.

At any time after receiving a write or read request from a host, theselection module 234 can assess the current status of a single datastorage device as well as the overall data storage system. Although anytype and number of inputs can be concurrently and/or sequentiallyevaluated by the selection module 234, some embodiments specificallyreceive the status of pending writes in a write queue, which may be thevolume, size, and buffer characteristics of data associated with pendingwrite requests. The selection module 234 may further receive systemperformance metrics, such as power consumption, average data accesslatency, and bit error rates.

A designated write location of pending writes along with the version ofdata provides biographical information about pending data writes to theselection module 234. Any number and type of environmental conditionscan be polled, and/or detected with the sensor 246, to identify anypotentially adverse data access situations. For instance, a temperaturesensor 246 can be used to verify the temperature inside a data storagedevice compared to a polled ambient temperature received from a remotehost. Other environmental conditions, such as humidity, vibrations, andairflow can also be polled and/or sensed to provide a more comprehensivestatus of the data storage device and system.

The selection module 234 can log the execution and system conditionsassociated with the servicing data access requests. The collection ofinformation pertaining to previously serviced data access requestsallows the selection module 234 to more intelligently react to systemconditions and proactively initiate actions to optimize the servicing offuture data access requests. That is, the selection module 234 can takecurrent device/system conditions along with data from the log 244 tointelligently identify reactive and proactive actions that can optimizethe servicing of pending read and write requests. As a result, theselection module 234 can reactively and proactively move data betweenvolatile buffers and non-volatile memory, alter write locations, andchange read locations.

The ability to evaluate and determine the operating status of the datastorage device and system to intelligently execute actions to servicepending data access request allows the data storage device to adapt tochanging conditions and service requests as fast as possible. In regardsto the asymmetric rewritable in-place memory, the selection module 234can intelligently write to the non-volatile memory when there is a lowerrisk of a read request for the data within the settle time, retain datain a buffer/cache memory to service read requests, and move data todifferent buffers/cache locations to provide the lowest read latency.

With the selection module 234 reactively and proactively conductingactions to optimize servicing of pending data requests, the currentlocation of valid data can be difficult to discern without a robustmapping scheme. In yet, mapping logical block address (LBA) to physicalblock address (PBA) as well as LBA to LBA can be expensive in terms ofprocessing and data capacity, particularly in an on-chip SRAM buffer.Mapping can be further complicated with the redundant retention of datain two different locations in order to service read requests for dataduring the settle time. Accordingly, some embodiments utilize theselection module 234 to designate the storage location, and processingtime, for LBA-to-PBA and LBA-to-LBA mapping operations.

FIG. 7 illustrates a block representation of an example mapping scheme250 that may be implemented in a data storage device employing thememory array 140 of FIG. 2. The presence of multiple different types ofmemory in a data storage device allows the selection module 234 togenerate multiple different data maps to optimize the capabilities, andcurrent status, of the respective types of memory.

In the non-limiting example shown in FIG. 7, the selection module 234can create a first level map 252 in a first type of memory 254, such asvolatile DRAM, SRAM, or non-volatile flash memory. The first level map252, in some embodiments, comprises at least one LBA-to-PBA boot mapthat contains entries pointing to granule of 12 entries. The first levelmap 252 can generally direct a controller to the logical or physicallocation of a second level map 256 where LBA-to-PBA translations arecontained with a greater resolution than the first level map 252. Thatis, the second level map 256 can comprise local entries pointing to thefirst granule holding a host-provided data sector. As a result of thefirst 252 and second 256 level maps, data reads, writes, and updates canbe efficiently handled.

The selection module 234 may create a separate shadow map 258 in thefirst type of memory 254 that contains information about temporarylocations of shadow data. It is understood that shadow data is datastored redundantly for a short time period until data is permanentlyresident in non-volatile memory. The shadow map 258 may be simple, orsophisticated, with one or more versions of data being identified. Forinstance, successive versions of data may be tracked by the shadow 258,first level 252, and second level 256 to ensure the most recent versionof data is retrieved by a read request for the data. It is noted thatthe shadow 258 and level maps 252/256 may be concurrently written, read,and updated by a common, or dissimilar controllers.

Data that is tracked by the shadow 258 and level maps 252/256 eventuallyis written to the main data store 260 that is a bit addressablerewritable in-place memory 262. As shown, the main data store 260 andsecond level map 256 are each stored in the non-volatile rewritablein-place memory 262. However, such configuration is not required orlimiting as any number and type of memory can be utilized for therespective maps 252/256/258. For example, the first level map 252 may bestored in serial NOR flash, the shadow map 258 stored in cluster SRAM,and the second level map 256 stored in DDR DRAM. The use of at least twodifferent types of memory 254/262 allows the selection module 234 tointelligently generate and maintain the various maps 252/256/258 inmemories that most efficiently allow for the servicing of data read andwrite requests.

It is contemplated that the selection module 234 can alter the size,purpose, and memory location of the assorted maps 252/256/258 toaccommodate changing system and device conditions. The selection module234 may further alter a memory and/or map via virtualization. That is,the selection module 234 can create virtual machines that independentlyoperate in software/firmware despite being located in a common memory254/256. Such virtualization capability allows the selection module 234to adapt in real-time to detected and/or predicted system and deviceconditions to optimize data read and write latencies.

FIG. 8 illustrates a block representation of a portion of an exampledata storage device 270 that employs virtualization of memory inaccordance with various embodiments. One or more different write cache272 can feed into a non-volatile memory 274 that comprises bitaddressable rewritable in-place memory, such as array 140. While a datastorage device 270 may consist of multiple separate non-volatilememories 274, some embodiments contain a single non-volatile memory 274logically separated into different memory tiers, which can becharacterized as virtualized storage.

A memory 274 can be virtualized into any number of tiers that are mappedby at least one level map 252/256 and potentially a shadow map 258.Although not required or limiting, the virtualized storage scheme shownin FIG. 8 is hierarchical in nature and has a first tier 276 assigned toa first PBA range, a second tier 278 assigned to a second PBA range, athird tier 280 assigned to a third PBA range, and fourth tier 282assigned to a fourth PBA range. The non-overlapping ranges of therespective tiers 276/278/280/282 may, alternatively, be assigned toLBAs.

As shown by solid arrows, data may flow between any virtualized tiers asdirected by a selection module and/or local controller. For instance,data may consecutively move through the respective tiers 276/278/280/282depending on the amount of updating activity, which results in the leastaccessed data being resident in the fourth tier 282 while the mostfrequently updated data is resident in the first tier 276. Anothernon-limiting example involves initially placing data in the first tier276 before moving the data to other, potentially non-consecutive, tiersto allow for more efficient storage and retrieval, such as based on datasize, security, and/or host origin.

It can be appreciated that the rewritable in-place memory of thenon-volatile memory 274 allows for the adaptive virtualization of therespective tiers 276/278/280/282. That is, the ability to write data toa specific bit, byte, and sector without having to store non-selecteddata of a common page allows the virtualized tiers to have evolvingsizes, assigned contents, and existence based on the system and deviceneeds determined by the selection module 234. Therefore, the virtualizedscheme of FIG. 8 may be altered in any way over time by the selectionmodule 234 to optimize data storage for the real-time conditions of thedata storage system and device.

The virtualization of portions of a non-volatile memory 274 iscomplemented by the capability of a selection module 234 to takeproactive actions to meet forecasted data storage activity and/oroperational events. FIG. 9 depicts a block representation of a portionof an example data storage device 290 that employs a selection module234 having a prediction circuit 248 operated in accordance with variousembodiments. The prediction circuit 248 can detect and/or poll a diversevariety of information pertaining to current, and past, data storageoperations as well as environmental conditions during such operations.It is noted that the prediction circuit 248 may utilize one or morereal-time sensors 246 of the selection module 234 to detect one or moredifferent environmental conditions, such as device operatingtemperature, ambient temperature, and power consumption.

With the concurrent and/or sequential input of one or more parameters,as shown in FIG. 9, the prediction circuit 248 can forecast theoccurrence of future events that can be accommodated as directed by theselection module 234. For instance, the selection module 234 can modifydata, such as data size, location, and security to accommodate apredicted event. In another non-limiting instance, the selection module234 can direct the redundant writing of shadow data to one or morelocations other than the non-volatile memory, which can provideefficient reading of data while the non-volatile memory is within itssettle time.

Although not exhaustive, the prediction circuit 248 can receiveinformation about the current status of a write queue, such as thevolume and size of the respective pending write requests in the queue.The prediction circuit 248 may also poll, or determine, any number ofsystem/device performance metrics, like write latency, read latency, anderror rate. The version of data pending, or being written, may beevaluated by the prediction circuit 248 to establish how frequently datais being updated. The assigned write location of pending and previouslycompleted data writes may be utilized by the prediction circuit 248 toperform wear leveling operations in non-volatile memory.

One or more environmental conditions can be sensed in real-time and/orpolled by the prediction circuit 248 to determine trends and situationsthat likely indicate future data storage activity. The availability ofspace in one or more shadow buffers, such as SRAM or NOR flash, mayidentify to the prediction circuit 248 the performance of the buffer(s)along with indicating the system's capacity to handle future pendingwrite requests. The prediction circuit 248 can employ one or morealgorithms 292 and at least one log 294 of previous data storageactivity to forecast the events and accommodating actions that canoptimize the servicing of read and write requests.

It is contemplated that the log 294 consists of both previously recordedand externally modeled events, actions, and system conditions. Thelogged information can be useful to the selection module 234 indetermining the accuracy of predicted events and the effectiveness ofproactively taken actions. Such self-assessment can be used to updatethe algorithm(s) 292 to improve the accuracy of predicted events. Bydetermining the accuracy of previously predicted events, the predictionmodule 248 can assess a risk that a predicted action will occur and/orthe chances of the accommodating actions will optimize systemperformance. Such ability allows for the prediction module 248 tooperate with respect to thresholds established by the selection module234 to ignore predicted events and proactive actions that are lesslikely to increase system performance, such a 95% confidence that anevent will happen or a 90% chance a proactive action will increasesystem performance.

With the ability to ignore less than likely predicted events andproactive actions, the selection module 234 can concurrently andsequentially generate numerous different scenarios, such as withdifferent algorithms 292 and/or logs 294. As a non-limiting example, theprediction circuit 248 may be tasked with predicting events, andcorresponding correcting actions, based on modeled logs alone, real-timesystem conditions alone, and a combination of modeled and real-timeinformation. Accordingly, the prediction circuit 248 and selectionmodule 234 can assess system conditions to generate reactive andproactive actions that have a high chance of improving the servicing ofcurrent, and future, data access requests to a data storage device.

FIGS. 10A-10D respectively convey example operational schemes resultingfrom the intelligent operation of the selection module 234 over time.FIG. 10A shows scheme 300 where a pending write request 302 isconcurrently written to non-volatile memory in step 304 and at least onewrite buffer in step 306. An actual, or predicted, event in step 308 maytrigger the selection module 234 to read data from the buffer in step310 until a timer expires in step 312. In other words, the redundantwriting of data allows for reading of the data from the buffer in step310 while the non-volatile memory is in its settle time and subsequentlyfrom the non-volatile memory in step 314.

In scheme 300, the event of step 308 may be a longer than average settletime, perhaps due to device temperature, or other operating conditionthat calls for the reading of data during the settle time of thenon-volatile memory. For example, writing of a multi-level non-volatilememory cell or predicted likelihood that a host will request therecently written data in step 308 can prompt the selection module 234 todirect data retrieval from a temporary buffer. It is contemplated thatthe timer of step 312 can be for the settle time of the non-volatilememory or for a designated delay time determined by the selection module234 to more efficiently service data access requests than if no delaywas present.

FIG. 10B represents example scheme 320 where the write request of step302 and writing of data to both non-volatile memory and buffer are thesame as scheme 300. However, no actual or predicted event occurs andinstead data is written to a flash memory in step 322 and subsequentlyread from the memory in step 324 until a timer expires in step 312 anddata is then read from the non-volatile memory in step 314. Theutilization of flash memory in steps 322 and 324 can partially, orcompletely, empty the write buffer, which can allow the faster writebuffer to service other pending system activities.

The scheme 330 of FIG. 10C shows how an actual or predicted event instep 332 may occur after receipt of a pending write request to a datastorage device. The event can trigger the selection module 234 to foregowriting data to the non-volatile memory and instead write only to thewrite buffer in step 306 and read from the buffer in step 310 while step304 writes the data to the non-volatile memory. By writing data to thebuffer first, then to the non-volatile memory, system resources may bemore efficiently used, such as during times of high data read accessing.At the conclusion of the settle time of the non-volatile memory, asrepresented by the expiration of the timer in step 312, the data is readfrom the non-volatile memory in step 314.

Some embodiments predict the unscheduled loss, or reduction, of power tothe data storage device/system, which triggers the selection module tosend all data from a volatile buffer to non-volatile memory. Otherembodiments respond to a scheduled reduction in power, such as ashut-down of the device/system, by sending all data to the rewritablein-place non-volatile memory. Since the settle time of the non-volatilememory does not need to be accounted for during a shut-down, theselection module can dump large amounts of data to the non-volatilememory without harm.

The relatively fast read time of the rewritable in-place memory can beintelligently employed during a scheduled shut-down by storing one ormore boot maps to the non-volatile memory. It is noted that theselection module 234 may generate a new boot map based on current, andrecent, system activity to provide a nearly instant-on boot processwhere the boot map is loaded exclusively from the non-volatile memoryand subsequently the boot map is moved to other memory where updates aremore efficiently carried out. By sending existing or newly generatedboot data, such as security information, level maps, and firmware, adata storage device/system can be ready to receive new data accessrequests in less than 1 second from time of power initialization.

Turning to FIG. 10D, scheme 340 handles the write request from step 302by concurrently and redundantly writing to the non-volatile memory instep 304 and to a buffer in step 306. While the write to thenon-volatile memory settles, step 310 services any reads from the bufferuntil a selection module 234 timer expires in step 312. A predicted, orencountered, event in step 342 triggers the selection module 234 tocontinue servicing data read requests from the buffer instead of fromthe non-volatile memory, despite the data write to the non-volatilememory having settled. The event in step 342 is not limited, but can beany operating condition that may inhibit or degrade data reads from thenon-volatile memory, such as an error, high device/system processingactivity, or channel availability.

It is contemplated that the selection module 234 can handle overwritesituations during the settle time of a memory cell. In such situations,“Dirty” and “WriteInProgress” flags are added to a cache entry. Althoughnot required or limiting, a Dirty flag indicates the data in the cachehas not been written to the non-volatile memory yet and aWriteInProgress flag indicates that the data in the cache has beenwritten to the non-volatile memory, but the cool down period hasn'tcompleted. As a result, the selection module 234 can intelligentlyassess whether data is currently in a settle phase, which decreasesredundant operations and increases system performance.

Through the example schemes of FIGS. 10A-10D, it can be appreciated thatthe selection module 234 can take a variety of actions to adapt topredicted and/or actual events to optimize the servicing of data accessrequests. Such intelligent adaptation allows the selection module tomaintain high data access bandwidth and low data access latencyregardless of the volume of data accesses. The intelligent adaptationfurther allows the selection module to alter data storage locations,mapping schemes and the writing of shadow data to accommodate changes indata priority and security, which can send highly important data tonon-volatile data more quickly.

FIG. 11 is a flowchart of an example in-place memory utilization routine350 that can be carried out by the assorted embodiments of FIGS. 1-10D.One or more data storage devices can be activated in step 352 with eachdata storage device consisting of a selection module, buffer memory, anda rewriteable in-place non-volatile memory. The data storage devices canoperate for any amount of time as part of a distributed network in adata storage system. When at least one data storage device receives oneor more data write request from a host in step 354, the selection modulecan write the data associated with the pending data request to at leastone buffer memory and the non-volatile memory in step 356.

The programming of the write data in step 356 can be done concurrentlyor sequentially to the buffer and non-volatile memories. However, whenthe data is written to the non-volatile memory, the selection modulebegins a timer to determine when the memory cells will finish settlingand be available to service a read request. In some embodiments, step356 involves the prediction of a settle time that differs from apreexisting default settle time, such as in reaction to high devicetemperatures and/or activity around the physical location of the datadestination.

At any time during and after the writing of data to the non-volatilememory in step 356, decision 358 can field read requests for that datawith the selection module. That is, if a read request is received by theselection module while the non-volatile memory is in its settle time,step 360 proceeds to service the read request from data stored in thebuffer. At the conclusion of the any read requests serviced with step360, or in the event no read request is received from decision 358,decision 362 proceeds to evaluate if the selection module timer hasexpired.

An expired selection module timer allows step 364 to service a readrequest from the non-volatile memory while an active timer proceeds backto step 360 where the buffer location is used for any read request. Itis noted that steps and decisions 354-364 can be cyclically revisitedany number of times to handle data read and write requests. At any timeafter data is written in step 354, step 366 can move data between actualor virtualized tiers within the non-volatile memory. In yet, such datatransfer is not required. The final non-volatile memory location issubsequently mapped in step 368 to direct any read operations to themost current version of data stored in the non-volatile memory. It isnoted that the mapping of data in step 368 may correspond with theremoval, or scheduled removal, of data from each buffer and from theshadow map directing data access to the buffer.

Through the various embodiments of the present disclosure, anon-volatile rewritable in-place memory can be utilized to optimize theservicing of data access requests. However, due to the asymmetricalwrite time associated with the rewriteable in-place memory, a selectionmodule intelligently evaluates current and logged system activity toallow the servicing of read requests for data settling in thenon-volatile memory. The selection module allows for reactive andproactive actions to be taken to maintain, and optimize, systemperformance in response to actual and forecasted events. As a result,the data storage system can enjoy less data read latency, decreased boottimes, and sophisticated virtualization schemes that adapt to changingsystem conditions.

What is claimed is:
 1. An apparatus comprising a non-volatile memoryresident in a data storage device, the non-volatile memory comprising arewritable in-place memory cell having a read-write asymmetry, theread-write asymmetry corresponding with a settle time after a data writeto the rewritable in-place memory cell, the non-volatile memory dividedby a selection module of the data storage device into a first group oftiers prior to an event and into a second group of tiers after theevent, the first and second groups of tiers being different.
 2. Theapparatus of claim 1, wherein the rewritable in-place memory cellcomprises a selection layer contacting a resistive unit without atransistor.
 3. The apparatus of claim 1, wherein the data storage devicehas a buffer memory that is a different type of memory than thenon-volatile memory.
 4. The apparatus of claim 1, wherein the rewritablein-place memory cell does not have a consistent resistive state that canbe read during the settle time.
 5. The apparatus of claim 1, wherein thefirst group of tiers has a different number of tiers than the secondgroup of tiers.
 6. The apparatus of claim 1, wherein the first andsecond groups of tiers are each virtualized.
 7. The apparatus of claim1, wherein each tier of the second group of tiers is assigned to a rangeof physical block addresses.
 8. The apparatus of claim 7, wherein theranges of the respective tiers of the second group of tiers aredifferent and non-overlapping.
 9. A method comprising: activating anon-volatile memory resident in a data storage device, the non-volatilememory comprising a rewritable in-place memory cell having a read-writeasymmetry the read-write asymmetry corresponding with a settle timeafter a data write to the rewritable in-place memory cell; dividing thenon-volatile memory into a first group of tiers with a selection moduleof the data storage device; and adapting to an event by altering thenon-volatile memory into a second group of tiers, the first and secondgroups of tiers being different.
 10. The method of claim 9, wherein theevent is a detected change in operating performance of the data storagedevice.
 11. The method of claim 9, wherein the second group of tiers isarranged into a hierarchical structure.
 12. The method of claim 11,wherein a first tier of the second group of tiers is a cache where datais initially stored prior to being moved to other tiers of the secondgroup of tiers.
 13. The method of claim 11, wherein the respective tiersof the second group of tiers corresponds with an access frequency ofdata stored in the respective tiers of the second group of tiers. 14.The method of claim 9, wherein the selection module updates data in therespective tiers of the second group of tiers without moving the data.15. A method comprising activating a non-volatile memory resident in adata storage device, the non-volatile memory comprising a rewritablein-place memory cell having a read-write asymmetry the read-writeasymmetry corresponding with a settle time after a data write to therewritable in-place memory cell; dividing the non-volatile memory into afirst group of tiers with a selection module of the data storage device;predicting an event with a selection module of the data storage device;adapting to the event proactively by altering the non-volatile memoryinto a second group of tiers, the first and second groups of tiers beingdifferent.
 16. The method of claim 15, wherein the predicted eventforecasted by the selection module to hinder a performance parameter ofthe data storage device.
 17. The method of claim 15, wherein theselection module divides data into multiple different tiers of thesecond group of tiers in response to the predicted event.
 18. The methodof claim 15, wherein the selection module stripes data across multipledifferent tiers of the second group of tiers in response to thepredicted event.
 19. The method of claim 15, wherein the selectionmodule writes a shadow copy of data in a buffer memory of the datastorage device that is read throughout a settle time of the non-volatilememory.
 20. The method of claim 15, wherein a map tier of the secondgroup of tiers consists of a map of data resident in the non-volatilememory.